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|Title:||Strain-driven phase transitions and associated dielectric/piezoelectric anomalies in BiFeO3 thin films||Authors:||Huang, Chuanwei
Chu, Y. H.
|Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
|Issue Date:||2010||Source:||Huang, C. W., Chu, Y. H., Chen, Z. H., Wang, J., Sritharan, T., He, Q., et al. (2010). Strain-driven phase transitions and associated dielectric/piezoelectric anomalies in BiFeO3 thin ﬁlms. Applied Physics Letters, 97, 152901.||Series/Report no.:||Applied physics letters||Abstract:||Strain-driven phase transitions and related intrinsic polarization, dielectric, and piezoelectric properties for single-domain films were studied for BiFeO3 using phenomenological Landau–Devonshire theory. A stable and mixed structure between tetragonal and rhombohedral-like (monoclinic) phases is predicted at a compressive misfit strain of um=−0.0382 without an energy barrier. For a tensile misfit strain of um=0.0272, another phase transition between the monoclinic and orthorhombic phases was predicted with sharply high dielectric and piezoelectric responses.||URI:||https://hdl.handle.net/10356/99908
|DOI:||10.1063/1.3499658||Rights:||© 2010 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.3499658. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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