View Item 
      •   Home
      • 1. Schools
      • College of Engineering
      • School of Materials Science and Engineering (MSE)
      • MSE Journal Articles
      • View Item
      •   Home
      • 1. Schools
      • College of Engineering
      • School of Materials Science and Engineering (MSE)
      • MSE Journal Articles
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.
      Subject Lookup

      Browse

      All of DR-NTUCommunities & CollectionsTitlesAuthorsBy DateSubjectsThis CollectionTitlesAuthorsBy DateSubjects

      My Account

      Login

      Statistics

      Most Popular ItemsStatistics by CountryMost Popular Authors

      About DR-NTU

      Charge injection at carbon nanotube-SiO2 interface

      Thumbnail
      27. Charge Injection at Carbon Nanotube-SiO2 Interface.pdf (407.8Kb)
      Author
      Ong, Hock Guan
      Cheah, Jun Wei
      Chen, Lang
      TangTang, Hosea
      Xu, Yanping
      Li, Bing
      Zhang, Hua
      Li, Lain-Jong
      Wang, Junling
      Date of Issue
      2008
      School
      School of Materials Science and Engineering
      Version
      Published version
      Abstract
      Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube-SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface.
      Subject
      DRNTU::Engineering::Materials::Nanostructured materials
      Type
      Journal Article
      Series/Journal Title
      Applied physics letters
      Rights
      © 2008 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.2978249. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
      Collections
      • MSE Journal Articles
      http://dx.doi.org/10.1063/1.2978249
      Get published version (via Digital Object Identifier)

      Show full item record


      NTU Library, Nanyang Avenue, Singapore 639798 © 2011 Nanyang Technological University. All rights reserved.
      DSpace software copyright © 2002-2015  DuraSpace
      Contact Us | Send Feedback
      Share |    
      Theme by 
      Atmire NV
       

       


      NTU Library, Nanyang Avenue, Singapore 639798 © 2011 Nanyang Technological University. All rights reserved.
      DSpace software copyright © 2002-2015  DuraSpace
      Contact Us | Send Feedback
      Share |    
      Theme by 
      Atmire NV
       

       

      DCSIMG