dc.contributor.authorOng, Hock Guan
dc.contributor.authorCheah, Jun Wei
dc.contributor.authorChen, Lang
dc.contributor.authorTangTang, Hosea
dc.contributor.authorXu, Yanping
dc.contributor.authorLi, Bing
dc.contributor.authorZhang, Hua
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorWang, Junling
dc.identifier.citationOng, H. G., Cheah, J. W., Chen, L., TangTang, H., Xu, Y., Li, B., et al. (2008). Charge injection at carbon nanotube-SiO2 interface. Applied Physics Letters, 93(9), 093509.en_US
dc.description.abstractMost single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube-SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface.en_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 2008 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.2978249. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Materials::Nanostructured materials
dc.titleCharge injection at carbon nanotube-SiO2 interfaceen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.versionPublished versionen_US

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