dc.contributor.authorYou, Lu
dc.contributor.authorChua, Ngeah Theng
dc.contributor.authorYao, Kui
dc.contributor.authorChen, Lang
dc.contributor.authorWang, Junling
dc.date.accessioned2011-07-05T09:17:26Z
dc.date.available2011-07-05T09:17:26Z
dc.date.copyright2009en_US
dc.date.issued2009
dc.identifier.citationYou, L., Chua, N. T., Yao, K., Chen, L., & Wan, J. (2009). Influence of Oxygen Pressure on the Ferroelectric Properties of Epitaxial BiFeO3 Thin Films by Pulsed Laser Deposition. Physical Review B, 80.en_US
dc.identifier.urihttp://hdl.handle.net/10220/6862
dc.description.abstractThe growth window of multiferroic BiFeO3 thin films is very small. Both temperature and oxygen pressure will affect the film quality and phase purity significantly. We demonstrate here that even within the window where phase pure BiFeO3 thin films can be obtained, different oxygen partial pressures still lead to substantial variation in Bi/Fe ratio in the film, which closely link with the corresponding ferroelectric properties. Piezoelectric force microscopy also reveals significant difference in the domain structures of these films. A defectdipole complex model is proposed to explain the difference in the electrical properties and domain structures for films grown under different oxygen pressures.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesPhysical review Ben_US
dc.rights© 2009 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following DOI: http://dx.doi.org/10.1103/PhysRevB.80.024105. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
dc.titleInfluence of oxygen pressure on the ferroelectric properties of epitaxial BiFeO3 thin films by pulsed laser depositionen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.80.024105
dc.description.versionPublished versionen_US


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