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|Title:||Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure||Authors:||Li, S.
Maung Latt, K.
Park, H. S.
White, Timothy John
|Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials||Issue Date:||2002||Source:||Li, S., Dong, Z. L., Maung Latt, K., Park, H. S. & White, T. (2002). Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure. Applied Physics Letters, 80(13), 2296-2298.||Series/Report no.:||Applied physics letters||Abstract:||Three mechanisms for the formation of Cu diffusion channels in the Ta layer of a Cu/Ta/SiO2/Si structure are proposed. First, it is suggested that stacking faults formed during the recovery process induce localized regions of high internal energy in the Ta layer, from which Cu channels originate. Second, chemical reaction occurs at 800 °C and forms Ta4CuO11 across the Cu/Ta interface in Cu and Ta layers, which opens up channels for Cu diffusion. Third, triple junctions at the grain boundary of the Cu and Cu/Ta interface provide sites for the initiation of channel formation at 800 °C. At 950 °C, these channels in the diffusion barrier are absent, but Ta was oxidized into disordered Ta2O5 that may contain pathways for Cu diffusion.||URI:||https://hdl.handle.net/10356/97180
|DOI:||http://dx.doi.org/10.1063/1.1465107||Rights:||© 2002 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [DOI: http://dx.doi.org/10.1063/1.1465107]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||metadata.item.grantfulltext:||open||metadata.item.fulltext:||With Fulltext|
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