Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97184
Title: Synthesis of boron nitride nanowires
Authors: Chen, F.
Fu, J. J.
Hu, Z.
Liu, B. H.
Huo, K. F.
Chen, Yan
Ding, Jun
Dong, Zhili
White, Timothy John
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2002
Source: Huo, K. F., Hu, Z., Chen, F., Fu, J. J., Chen, Y., Liu, B. H., et al. (2002). Synthesis of boron nitride nanowires. Applied Physics Letters, 80(19), 3611-3613.
Series/Report no.: Applied physics letters
Abstract: A chemical method has been developed for synthesizing boron nitride nanowires through the reaction of a mixture gas of nitrogen (N2) and ammonia (NH3) over nanoscale α-FeB particles at 1100 °C. Boron content in the product comes from the α-FeB catalyst itself. Transmission electron microscopic image indicates an abundant quantity of BN nanowires with diameter about 20 nm and length up to several tens of microns. The product has also been characterized by high-resolution electron microscopy and electron energy loss spectrometer. The perfectly straight lattice fringes with an interlayer spacing of about 0.333 nm corresponding to d0002 spacing of h-BN indicate that the BN nanowires are well crystallized. Also, a growth mechanism has been speculated.
URI: https://hdl.handle.net/10356/97184
http://hdl.handle.net/10220/6895
DOI: http://dx.doi.org/10.1063/1.1479213
Rights: © 2002 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [DOI: http://dx.doi.org/10.1063/1.1479213]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
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