dc.contributor.authorHuo, K. F.
dc.contributor.authorHu, Z.
dc.contributor.authorChen, F.
dc.contributor.authorFu, J. J.
dc.contributor.authorChen, Yan
dc.contributor.authorLiu, B. H.
dc.contributor.authorDing, Jun
dc.contributor.authorDong, Zhili
dc.contributor.authorWhite, Timothy John
dc.date.accessioned2011-07-13T07:39:08Z
dc.date.available2011-07-13T07:39:08Z
dc.date.copyright2002en_US
dc.date.issued2002
dc.identifier.citationHuo, K. F., Hu, Z., Chen, F., Fu, J. J., Chen, Y., Liu, B. H., et al. (2002). Synthesis of boron nitride nanowires. Applied Physics Letters, 80(19), 3611-3613.en_US
dc.identifier.urihttp://hdl.handle.net/10220/6895
dc.description.abstractA chemical method has been developed for synthesizing boron nitride nanowires through the reaction of a mixture gas of nitrogen (N2) and ammonia (NH3) over nanoscale α-FeB particles at 1100 °C. Boron content in the product comes from the α-FeB catalyst itself. Transmission electron microscopic image indicates an abundant quantity of BN nanowires with diameter about 20 nm and length up to several tens of microns. The product has also been characterized by high-resolution electron microscopy and electron energy loss spectrometer. The perfectly straight lattice fringes with an interlayer spacing of about 0.333 nm corresponding to d0002 spacing of h-BN indicate that the BN nanowires are well crystallized. Also, a growth mechanism has been speculated.en_US
dc.format.extent3 p.
dc.language.isoenen_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 2002 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [DOI: http://dx.doi.org/10.1063/1.1479213]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials
dc.titleSynthesis of boron nitride nanowiresen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1479213
dc.description.versionPublished versionen_US


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