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Title: Average density of states in disordered graphene systems
Authors: Wu, Shangduan
Jing, Lei
Li, Qunxiang
Shi, Q. W.
Chen, Jie
Su, Haibin
Wang, Xiaoping
Yang, Jinlong
Keywords: DRNTU::Engineering::Materials::Nanostructured materials
Issue Date: 2008
Source: Wu, S., Jing, L., Li, Q., Shi, Q. W., Chen, J., Su, H., et al. (2008). Average density of states in disordered graphene systems. Physical Review B, 77.
Series/Report no.: Physical review B
Abstract: In this paper, the average density of states (ADOS) in graphene with binary alloy disorders is calculated by the recursion method. We observed an obvious resonant peak and a dip in ADOS curves near the Dirac point, which result from interactions with surrounding impurities. We also found that the resonance energy (Er) and the dip position (εdip) are strongly dependent on the concentration of disorders (x) and their on-site potentials (v). A linear relation, εdip=xv, holds when the impurity concentration is low. This relation can also be extended when the impurity concentration is high, but with certain constraints. We also compute ADOS with a finite density of vacancies.
DOI: 10.1103/PhysRevB.77.195411
Rights: © 2008 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at: [DOI:]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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