Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing
Cheng, Jian Gong
Date of Issue2005
School of Materials Science and Engineering
The crystallization temperature of Bi1.5Zn0.5Nb1.5O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ/cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures 400 °C makes integration with polymeric substrates possible.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Applied physics letters
© 2005 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.2140071. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.