Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/92389
Title: Concurrent nonvolatile resistance and capacitance switching in LaAlO3
Authors: Wu, Shuxiang
Peng, Haiyang
Wu, Tom
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2011
Source: Wu, S., Pen, H., & Wu, T. (2011). Concurrent nonvolatile resistance and capacitance switching in LaAlO3. Applied physics letters, 98.
Series/Report no.: Applied physics letters
Abstract: We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO3/Nb:SrTiO3 heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high capacitance state while a forward bias drives it into a high resistance and low capacitance state. Our experiments suggest that both the formation of conducting filaments and the modulation of interface barrier contribute to the resistance switching. Oxygen vacancies play critical roles in determining the switching characteristics and can be controlled in the process of device fabrication.
URI: https://hdl.handle.net/10356/92389
http://hdl.handle.net/10220/6923
ISSN: 0003-6951
DOI: http://dx.doi.org/doi:10.1063/1.3560257
Rights: Applied Physics Letters © copyright 1997 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

Files in This Item:
File Description SizeFormat 
Concurrent nonvolatile resistance and capacitance switching in LaAlO3.pdf279.35 kBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.