dc.contributor.authorDing, Liang
dc.contributor.authorChen, Tupei
dc.contributor.authorLiu, Yang
dc.contributor.authorLiu, Yu Chan
dc.date.accessioned2011-07-28T00:55:38Z
dc.date.available2011-07-28T00:55:38Z
dc.date.copyright2008en_US
dc.date.issued2008
dc.identifier.citationDing, L., Chen, T., Liu, Y., & Liu, Y. C. (2008). A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation. Silicon photonics III.en_US
dc.identifier.urihttp://hdl.handle.net/10220/6938
dc.description.abstractBoth isolated Si nanocrystals (nc-Si) dispersedly distributed in a SiO2 matrix and densely stacked nc-Si layers embedded in SiO2 have been synthesized with the ion implantation technique followed by high temperature annealing. The dielectric functions of the isolated nc-Si and densely-stacked nc-Si layer embedded in SiO2 have been determined with spectroscopic ellipsometry (SE) in the photon energy range of 1.1-5 eV. The dielectric functions of these two different Si nanostructures were successfully extracted from the SE fitting based on a multi-layer fitting model that takes into account the distribution of nc-Si in SiO2 and a five phase model (i.e., air/SiO2 layer/densely-stacked nc-Si layer/SiO2 layer/Si), respectively. The dielectric spectra of isolated nc-Si distributed in SiO2 present a two-peak structure, while the dielectric spectra of densely-stacked nc-Si layer show a single broad peak, being similar to that of amorphous Si. The dielectric functions of these two Si nanostructures both show significant suppressions as compared with bulk crystalline Si. However, it has been observed that the densely stacked nc-Si layer exhibits a more significant suppression in the dielectric spectra than the isolated nc-Si dispersedly embedded in SiO2. This is probably related to the two factors: (i) the nc-Si size (~3 nm) of the densely stacked nc-Si layer is smaller than that (~4.5 nm) of the isolated nc-Si embedded in SiO2 matrix, and (ii) the densely stacked nc-Si layer has an amorphous phase.en_US
dc.format.extent6 p.en_US
dc.language.isoenen_US
dc.rights© 2008 SPIE--The International Society for Optical Engineering. This paper was published in Proc. SPIE 6898 and is made available as an electronic reprint (preprint) with permission of SPIE--The International Society for Optical Engineering. The paper can be found at the following official DOI: http://dx.doi.org/10.1117/12.762600.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
dc.titleA comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantationen_US
dc.typeConference Paper
dc.contributor.conferenceSilicon photonics IIIen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1117/12.762600
dc.description.versionPublished versionen_US
dc.contributor.organizationSingapore Institute of Manufacturing Technologyen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record