Influence of nanocrystal distribution on electroluminescence from Si+-implanted SiO2 thin films
Zhu, Fu Rong
Date of Issue2008
Silicon photonics III (2008)
School of Electrical and Electronic Engineering
Institute of Materials Research and Engineering
Light emitting diodes (LEDs) based on a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in SiO2 have been fabricated with low-energy ion implantation. Under a negative gate voltage as low as ~-5 V, both visible and infrared (IR) electroluminescence (EL) have been observed at room temperature. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at ~460, ~600, ~740, and ~1260 nm, in which the ~600-nm band dominants the spectra. The EL properties have been investigated together with the current transport properties of the Si+-implanted SiO2 films. A systematic study has been carried out on the effect of the Si ion implantation dose and the energy on both the current transport and EL properties. The mechanisms of the origin of the four different EL bands have been proposed and discussed.
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
© 2008 SPIE--The International Society for Optical Engineering. This paper was published in Proc. SPIE 6898 and is made available as an electronic reprint (preprint) with permission of SPIE--The International Society for Optical Engineering. The paper can be found at the following official DOI: http://dx.doi.org/10.1117/12.762617. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.