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|Title:||Directional and controllable edge-emitting ZnO ultraviolet random laser diodes||Authors:||Yu, S. F.
Yang, H. Y.
Liang, H. K.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio||Issue Date:||2010||Source:||Liang, H. K., Yu, S. F., & Yang, H. Y. (2010). Directional and controllable edge-emitting ZnO ultraviolet random laser diodes. Applied Physics Letters, 96.||Series/Report no.:||Applied physics letters||Abstract:||Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed i-ZnO:Al(3%)/n-ZnO:Al(5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heterojunction rib waveguide structure. Hence, emission intensity (threshold current) can be enhanced (reduced) by ∼ 9 times ( ∼ 40%). Directional emission as well as controllability on the number of the random lasing modes can also be achieved.||URI:||https://hdl.handle.net/10356/93851
|ISSN:||0003-6951||DOI:||10.1063/1.3356221||Rights:||© 2010 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.3356221. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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