Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE
Sun, Z. Z.
Date of Issue2011
We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical properties of GaN were investigated as a function of Ga-flux. For the first time, the presence of 2DEG is demonstrated in AlGaN/GaN HEMT structure on Si (111) substrate by PA-MBE. A high electron mobility of 1100 cm2/V.sec is obtained with a sheet carrier density of 9 × 1012 cm-2.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Physica status solidi C
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