Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/92386
Title: Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition
Authors: Fam, Derrick Wen Hui
Tok, Alfred Iing Yoong
Keywords: DRNTU::Engineering::Materials::Nanostructured materials
Issue Date: 2009
Source: Fam, D. W. H., & Tok, A. I. Y. (2009). Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition. Journal of Colloid and Interface Science, 338, 266-269.
Series/Report no.: Journal of colloid and interface science
Abstract: This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of drop-cast though convenient was unable to produce replicable transistor device due to its inherent inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good transistor device.
URI: https://hdl.handle.net/10356/92386
http://hdl.handle.net/10220/6959
DOI: http://dx.doi.org/10.1016/j.jcis.2009.06.003
Rights: © 2009 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Colloid and Interface Science, Elsevier.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The published version is available at: http://dx.doi.org/10.1016/j.jcis.2009.06.003.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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