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|Title:||Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE||Authors:||Agrawal, M.
Sun, Z. Z.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2011||Source:||Dharmarasu, N., Agrawal, M., Radhakrishnan, K., & Sun, Z. Z. (2011). Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE. Paper presented at the 9th International Conference on Nitride Semiconductors.||Abstract:||Recently, AlGaN/GaN HEMTs grown on 100 mm diameter Si using plasma assisted molecular beam epitaxy (PA-MBE) have been demonstrated [1,2]. In these structures, the growth rate is limited by the active nitrogen species available from the nitrogen plasma. Consequently, longer growth times are required to achieve thicker buffer layer necessary for the device structures. However, the narrow growth widow for the GaN layer in PA-MBE technique is affected by the fluctuation in substrate temperature and material fluxes during the long growth period.||URI:||https://hdl.handle.net/10356/92221
|Rights:||© 2011 9th International Conference on Nitride Semiconductors. This is the author created version of a work that has been peer reviewed and accepted for publication by 9th International Conference on Nitride Semiconductors. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The official conference website is: http://www.icns9.org/.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Conference Papers|
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