Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
Sun, Z. Z.
Date of Issue2011
International Conference on Nitride Semiconductors (9th : 2011 : Glasgow, Scotland, UK)
School of Electrical and Electronic Engineering
Recently, AlGaN/GaN HEMTs grown on 100 mm diameter Si using plasma assisted molecular beam epitaxy (PA-MBE) have been demonstrated [1,2]. In these structures, the growth rate is limited by the active nitrogen species available from the nitrogen plasma. Consequently, longer growth times are required to achieve thicker buffer layer necessary for the device structures. However, the narrow growth widow for the GaN layer in PA-MBE technique is affected by the fluctuation in substrate temperature and material fluxes during the long growth period.
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
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