dc.contributor.authorShi, Yumeng
dc.contributor.authorDong, Xiaochen
dc.contributor.authorTantang, Hosea
dc.contributor.authorWeng, Cheng-Hui
dc.contributor.authorChen, Fuming
dc.contributor.authorLee, Chun Wei
dc.contributor.authorZhang, Keke
dc.contributor.authorChen, Yuan
dc.contributor.authorWang, Junling
dc.contributor.authorLi, Lain-Jong
dc.date.accessioned2011-12-16T08:28:34Z
dc.date.available2011-12-16T08:28:34Z
dc.date.copyright2008en_US
dc.date.issued2008
dc.identifier.citationShi, Y., Dong, X., Tantang, H., Weng, C.-H., Chen, F., Lee, C., & et al. (2008). Photoconductivity from carbon nanotube transistors activated by photosensitive polymers. Journal of physical chemistry C, 112 (46), 18201-18206.en_US
dc.identifier.urihttp://hdl.handle.net/10220/7421
dc.description.abstractWe perform electrostatic force microscopic measurements to reveal the mechanisms of the photoresponse from polymer-coated carbon nanotube transistors, where the effective gating due to the trapping of photogenerated electrons at SiO2 dielectric surfaces is found dominant. The distant photoresponse and the unique spatial-dependent photoconductivity for polymer-coated SWNT-network transistors are explored for the first time. The photoconductivity depends strongly on the polarity of the applied voltage across the contact pads, which suggests that a secondary effect (electrical field dependent exciton dissociation) needs to be included in addition to the photoinduced electrostatic gating. These spatial photoresponses are generally observed for various substrates and polymers. These results suggest a new strategy for achieving remote light detection, position sensors, or antenna devices.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of physical chemistry Cen_US
dc.rights© 2008 American Chemical Society.en_US
dc.subjectDRNTU::Engineering::Materials::Nanostructured materials
dc.titlePhotoconductivity from carbon nanotube transistors activated by photosensitive polymersen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1021/jp805315x
dc.description.versionAccepted versionen_US


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