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|Title:||Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles||Authors:||Lee, Chun Wei
Chan-Park, Mary B.
Poa, Patrick C. H.
|Keywords:||DRNTU::Engineering::Materials::Nanostructured materials||Issue Date:||2008||Source:||Lee, C. W., Weng, C. H., Wei, L., Chen, Y., Chan-Park, M. B., Tsai, C. H., & et al. (2008). Toward High-Performance Solution-Processed Carbon Nanotube Network Transistors by Removing Nanotube Bundles. Journal of physical chemistry C, 112(32), 12089-12091.||Series/Report no.:||Journal of physical chemistry C||Abstract:||Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60−65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic−aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by 1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.||URI:||https://hdl.handle.net/10356/98287
|DOI:||http://dx.doi.org/10.1021/jp805434d||Rights:||© 2008 American Chemical Society.||metadata.item.grantfulltext:||none||metadata.item.fulltext:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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