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      Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles

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      Author
      Lee, Chun Wei
      Weng, Cheng-Hui
      Wei, Li
      Chen, Yuan
      Chan-Park, Mary B.
      Tsai, Chuen-Horng
      Leou, Keh-Chyang
      Poa, Patrick C. H.
      Wang, Junling
      Li, Lain-Jong
      Date of Issue
      2008
      School
      School of Materials Science and Engineering
      Version
      Accepted version
      Abstract
      Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60−65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic−aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by 1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.
      Subject
      DRNTU::Engineering::Materials::Nanostructured materials
      Type
      Journal Article
      Series/Journal Title
      Journal of physical chemistry C
      Rights
      © 2008 American Chemical Society.
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      • MSE Journal Articles
      http://dx.doi.org/10.1021/jp805434d
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