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https://hdl.handle.net/10356/98287| Title: | Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles | Authors: | Lee, Chun Wei Weng, Cheng-Hui Wei, Li Chen, Yuan Chan-Park, Mary B. Tsai, Chuen-Horng Leou, Keh-Chyang Poa, Patrick C. H. Wang, Junling Li, Lain-Jong |
Keywords: | DRNTU::Engineering::Materials::Nanostructured materials | Issue Date: | 2008 | Source: | Lee, C. W., Weng, C. H., Wei, L., Chen, Y., Chan-Park, M. B., Tsai, C. H., & et al. (2008). Toward High-Performance Solution-Processed Carbon Nanotube Network Transistors by Removing Nanotube Bundles. Journal of physical chemistry C, 112(32), 12089-12091. | Series/Report no.: | Journal of physical chemistry C | Abstract: | Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60−65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic−aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by 1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield. | URI: | https://hdl.handle.net/10356/98287 http://hdl.handle.net/10220/7422 |
DOI: | 10.1021/jp805434d | Rights: | © 2008 American Chemical Society. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
| Appears in Collections: | MSE Journal Articles |
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