Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles
Author
Lee, Chun Wei
Weng, Cheng-Hui
Wei, Li
Chen, Yuan
Chan-Park, Mary B.
Tsai, Chuen-Horng
Leou, Keh-Chyang
Poa, Patrick C. H.
Wang, Junling
Li, Lain-Jong
Date of Issue
2008School
School of Materials Science and Engineering
Version
Accepted version
Abstract
Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60−65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic−aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by 1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.
Subject
DRNTU::Engineering::Materials::Nanostructured materials
Type
Journal Article
Series/Journal Title
Journal of physical chemistry C
Rights
© 2008 American Chemical Society.
Collections
http://dx.doi.org/10.1021/jp805434d
Get published version (via Digital Object Identifier)