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|Title:||Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure||Authors:||Dong, Xiaochen
|Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films||Issue Date:||2011||Source:||Dong, X., Wang, P., Fang, W., Su, C. Y., Chen, Y. H., Li, L. J., et al. (2011). Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure. Carbon, 49(11), 3672-3678.||Series/Report no.:||Carbon||Abstract:||Large-sized thin-films composed of single- and few-layered graphene have been synthesized by chemical vapor deposition (CVD) on copper foils under atmospheric pressure using ethanol or pentane as the precursor. Confocal Raman measurements, transmission electron microscopy and scanning tunneling microscopy show that the majority part of the obtained films exhibit hexagonal graphene lattice. Optical microscopy and electrical measurements confirm the continuity of these films. It is also found that the CVD-grown graphene films with ethanol as the precursor exhibit lower defect density, higher electrical conductivity, and higher hall mobility than those grown with pentane as the precursor. This liquid-precursor-based atmospheric pressure CVD synthesis provides a new route for simple, inexpensive and safe growth of graphene thin-films.||URI:||https://hdl.handle.net/10356/94435
|DOI:||10.1016/j.carbon.2011.04.069||Rights:||© 2011 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Carbon, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [DOI: http://dx.doi.org/10.1016/j.carbon.2011.04.069]||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SCBE Journal Articles|
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