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|Title:||Ultra-low power high efficient rectifiers with 3T/4T double-gate MOSFETs for RFID applications||Authors:||Kim, Tony Tae-Hyoung
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2011||Source:||Vaddi, R. & Kim, T. T. (2011). Ultra-low Power High Efficient Rectifiers with 3T/4T Double-gate MOSFETs for RFID Applications. IEEE International Symposium on Integrated Circuits (ISIC), pp. 601-604||Series/Report no.:||Abstract:||Recently, multi-gate MOSFETs such as double-gate MOSFETs have been identified as inevitable inclusion for future nano-scale circuit design. This paper explores the scope of tiedgate (3T), independent gate (4T), symmetric and asymmetric features of double-gate MOSFETs (DGMOSFETs) for ultra-low power and high efficient rectifiers for RFID applications. Various widely used rectifier topologies such as simple conventional rectifier, self-Vth cancellation (SVC) rectifier and differential drive rectifier etc, have been designed to investigate the better candidate for DGMOSFET technology. Analysis reveals that 3T differential drive rectifier topology shows the maximum power conversion efficiency (PCE) and higher DC output voltage level generation. Second part of the work further explores the effects of 3T/4T and symmetric/asymmetric features of DGMOSFETs on the performance of differential drive rectifier. Among the various DGMOSFET configurations for RFID rectifiers, symmetric tied-gate DGMOSFETs have the best power conversion efficiency and the lowest power consumption.||URI:||https://hdl.handle.net/10356/84509
|DOI:||http://dx.doi.org/10.1109/ISICir.2011.6131934||Rights:||© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/ISICir.2011.6131934].||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Conference Papers|
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