Please use this identifier to cite or link to this item:
|Title:||Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process||Authors:||Rutkevych, P. P.
Zeng, K. Y.
See, K. H.
Law, S. B.
Tsakadze, Z. L.
Ee, Elden Yong Chiang
|Keywords:||DRNTU::Engineering::Materials||Issue Date:||2005||Source:||Ee, E. Y. C., Chen, Z., Chan, L., See, K. H., Law, S. B., Xu, S., et al. (2005). Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process. Journal of vacuum science & technology B, 23, 2444-2448.||Series/Report no.:||Journal of vacuum science & technology B||Abstract:||Titanium silicon nitride (Ti–Si–N) has emerged as a strong candidate for next generation diffusion barrier material in copper/low-k dielectric back-end-of-line device fabrication. Low frequency, high density inductively coupled plasma process has been developed for the growth of Ti–Si–N film. This work employs the reaction between TixSiy and the nitrogen plasma. Ti–Si–N films have been successfully grown over different process conditions. Film properties were characterized by Rutherford backscattering spectrometry (RBS), x-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectroscopy, x-ray diffraction (XRD), and four-point resistivity probe. RBS reveals that 2–67 at. % of nitrogen can be achieved through the implantation of nitrogen in TixSiy film. XPS and XRD results show that TiN and Si3N4 are successfully formed. As the external bias increases from 100 to 300 V, there is an 80% increase in sheet resistance. Other process conditions investigated do not show a significant effect on film sheet resistance. Increasing argon plasma activation time can significantly increase the implantation depth of nitrogen into TixSiy substrate.||URI:||https://hdl.handle.net/10356/94919
|DOI:||http://dx.doi.org/10.1116/1.2131080||Rights:||© 2005 American Vacuum Society This paper was published in Journal of Vacuum Science & Technology B and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official URL: http://dx.doi.org/10.1116/1.2131080. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
Files in This Item:
|54. Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process.pdf||102.86 kB||Adobe PDF|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.