dc.contributor.authorGan, Zhenghao
dc.contributor.authorShao, W.
dc.contributor.authorMhaisalkar, Subodh Gautam
dc.contributor.authorChen, Z.
dc.contributor.authorLi, Hong Yu
dc.contributor.authorTu, K. N.
dc.contributor.authorGusak, A. M.
dc.date.accessioned2012-04-09T07:49:11Z
dc.date.available2012-04-09T07:49:11Z
dc.date.copyright2006en_US
dc.date.issued2006
dc.identifier.citationGan, Z., Shao, W., Mhaisalkar, S. G., Chen, Z., Li, H., Tu, K. N., et. al. (2006). Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects. Journal of materials research, 21(9), 2241-2245.en_US
dc.identifier.urihttp://hdl.handle.net/10220/7699
dc.description.abstractElectromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, representing a ∼200% improvement in lifetimes. However, further increment of the extension length from 60 to 120 nm did not result in any significant improvement in EM lifetimes. Based on calculations of current densities in the reservoir regions and recently reported nucleation, void movement, and agglomeration-based EM phenomena, it is proposed that there is a critical extension length beyond which increasing extension lengths will not lead to longer EM lifetimes.en_US
dc.format.extent5 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of materials researchen_US
dc.rights© 2006 Materials Research Society. This paper was published in Journal of Materials Research and is made available as an electronic reprint (preprint) with permission of Materials Research Society. The paper can be found at the following DOI: [http://dx.doi.org/10.1557/JMR.2006.0270].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Materials
dc.titleReservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnectsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1557/JMR.2006.0270
dc.description.versionPublished versionen_US


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