dc.contributor.authorGan, Zhenghao
dc.contributor.authorGusak, A. M.
dc.contributor.authorShao, W.
dc.contributor.authorChen, Zhong
dc.contributor.authorMhaisalkar, Subodh Gautam
dc.contributor.authorZaporozhets, T.
dc.contributor.authorTu, K. N.
dc.date.accessioned2012-04-11T00:47:07Z
dc.date.available2012-04-11T00:47:07Z
dc.date.copyright2007en_US
dc.date.issued2007
dc.identifier.citationGan, Z., Gusak, A. M., Shao, W., Chen, Z., Mhaisalkar, S. G., Zaporozhets, T., et. al. (2007). Analytical modeling of reservoir effect on electromigration in Cu interconnects. Journal of materials research, 22(1), 152-156.en_US
dc.identifier.urihttp://hdl.handle.net/10220/7709
dc.description.abstractElectromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model.en_US
dc.format.extent5 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of materials researchen_US
dc.rights© 2007 Materials Research Society. This paper was published in Journal of Materials Research and is made available as an electronic reprint (preprint) with permission of Materials Research Society. The paper can be found at the following DOI: [http://dx.doi.org/10.1557/jmr.2007.0001].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Materials
dc.titleAnalytical modeling of reservoir effect on electromigration in Cu interconnectsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1557/jmr.2007.0001
dc.description.versionPublished versionen_US


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