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|Title:||Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates||Authors:||Setiawan, Y.
Lee, Pooi See
Pey, Kin Leong
Wang, X. C.
|Keywords:||DRNTU::Engineering::Materials||Issue Date:||2008||Source:||Setiawan, Y., Lee, P. S., Balakumar, S., Pey, K. L., & Wang, X. C. (2008). Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates. Electrochemical and Solid-State Letters, 11(9).||Series/Report no.:||Electrochemical and solid-state letters||Abstract:||Laser-induced melt-mediated Ni-based germanosilicide has been formed on condensed SiGe substrates (with 40% Ge). Pure Ni germanosilicide formation was plagued by the presence of amorphous oxygen-rich globules. Platinum alloying has greatly improved the morphology of the laser-induced Ni(Pt) germanosilicide with the alleviation of oxygen incorporation during laser annealing. This results in an improvement in the surface roughness and electrical conductivity of the germanosilicide film. Low affinity of Pt toward oxygen is believed to have resulted in this improvement.||URI:||https://hdl.handle.net/10356/95002
|DOI:||http://dx.doi.org/10.1149/1.2953682||Rights:||© 2008 The Electrochemical Society. This paper was published in Electrochemical and Solid-State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.2953682. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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