Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/95006
Title: | Anomalous polarization switching in organic ferroelectric field effect transistors | Authors: | Nguyen, Chien A. Lee, Pooi See Ng, Nathaniel Su, Haibin Mhaisalkar, Subodh Gautam Ma, Jan Boey, Freddy Yin Chiang |
Keywords: | DRNTU::Engineering::Materials | Issue Date: | 2007 | Source: | Nguyen, C. A., Lee, P. S., Ng, N., Su, H., Mhaisalkar, S. G., Ma, J., et al. (2007). Anomalous polarization switching in organic ferroelectric field effect transistors. Applied physics letters, 91(4). | Series/Report no.: | Applied physics letters | Abstract: | The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors. | URI: | https://hdl.handle.net/10356/95006 http://hdl.handle.net/10220/8008 |
DOI: | 10.1063/1.2757092 | Schools: | School of Materials Science & Engineering | Rights: | © 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2757092. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | MSE Journal Articles |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
63. Anomalous polarization switching in organic ferroelectric field effect transistors.pdf | 382.98 kB | Adobe PDF | View/Open |
SCOPUSTM
Citations
20
17
Updated on Mar 27, 2024
Web of ScienceTM
Citations
20
17
Updated on Oct 30, 2023
Page view(s) 5
1,074
Updated on Mar 27, 2024
Download(s) 5
545
Updated on Mar 27, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.