dc.contributor.authorChow, F. L.
dc.contributor.authorLee, Pooi See
dc.contributor.authorPey, Kin Leong
dc.contributor.authorTang, L. J.
dc.contributor.authorTung, Chih Hang
dc.contributor.authorWang, X. C.
dc.contributor.authorLim, G. C.
dc.date.accessioned2012-05-16T07:41:27Z
dc.date.available2012-05-16T07:41:27Z
dc.date.copyright2006en_US
dc.date.issued2006
dc.identifier.citationChow, F. L., Lee, P. S., Pey, K. L., Tang, L. J., Tung, C. H., Wang, X. C., et al. (2006). Pulsed laser induced silicidation on TiN-capped Co/Si bilayers. Journal of Applied Physics, 99(4).en_US
dc.identifier.urihttp://hdl.handle.net/10220/8022
dc.description.abstractThis paper studies the effects of pulsed laser-induced annealing of TiN-capped Co/Si bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J /cm2, nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured CoSi2 grains in (111) direction are formed for a high fluence of 0.7 J /cm2. The highly textured CoSi2 layer is monocrystalline and fully coherent with the (111) plane of the Si substrate. However, it has a large amount of microstructural defects throughout the layer. Competitive growth mechanisms between crystallization of homogenous intermixed layer and the nucleation from the melt boundary are discussed.en_US
dc.format.extent6 p.
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2171774. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Materials
dc.titlePulsed laser induced silicidation on TiN-capped Co/Si bilayersen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.2171774
dc.description.versionPublished versionen_US


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