Micro-Raman spectroscopy investigation of nickel silicides and nickel (platinum) silicides
Lee, Pooi See
Pey, Kin Leong
Date of Issue2000
School of Materials Science and Engineering
The formation of Ni silicides has been successfully monitored by Raman spectroscopy. Ni silicides formed at different annealing temperatures using rapid thermal annealing were analyzed using Rutherford backscattering spectroscopy and X-ray diffraction. Raman spectroscopy was further used to examine these samples. The results showed that Raman spectroscopy could accurately identify the phases of Ni silicides formed at various temperatures. These findings were used to demonstrate the increased thermal stability of NiSi by the addition of Pt. This study demonstrates the applicability of Raman spectroscopy for monitoring the formation of NiSi, which was suggested to be the future silicide for deep submicrometer integrated circuit processing. Raman spectroscopy offers a unique tool for phase identification at localized areas and mapping characterization of Ni silicides with micrometer spatial resolution.
Electrochemical and solid-state letters
© 2000 The Electrochemical Society. This paper was published in Electrochemical and Solid-State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.1390986. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.