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|Title:||Pyramidal structural defects in erbium silicide thin films||Authors:||Srolovitz, David J.
Tan, Eu Jin
Chi, Dong Zhi
Pey, Kin Leong
Lee, Pooi See
Tung, Chih Hang
|Keywords:||DRNTU::Engineering::Materials||Issue Date:||2006||Source:||Tan, E. J., Bouville, M., Chi, D. Z., Pey, K. L., Lee, P. S., Srolovitz, D. J., et al. (2006). Pyramidal structural defects in Erbium silicide thin films. Applied Physics Letters, 88(2).||Series/Report no.:||Applied physics letters||Abstract:||Pyramidal structural defects, 5–8 μm wide, have been discovered in thin films of epitaxial ErSi2−x formed by annealing thin Er films on Si(001) substrates at temperatures of 500–800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate.||URI:||https://hdl.handle.net/10356/95015
|DOI:||10.1063/1.2162862||Rights:||© 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2162862. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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