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|Title:||Laser induced Ni(Ti) silicide formation||Authors:||Setiawan, Y.
Lee, Pooi See
Pey, Kin Leong
Wang, X. C.
Lim, G. C.
|Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials||Issue Date:||2006||Source:||Setiawan, Y., Lee, P. S., Pey, K. L., Wang, X. C., & Lim, G. C. (2006). Laser induced Ni(Ti) silicide formation. Applied Physics Letters, 88(11).||Series/Report no.:||Applied physics letters||Abstract:||Effects of Ti alloying during laser-induced Ni silicide formation is studied. Unique triple layer microstructures were found with the presence of supercell in the NiSi2 grains formed at the interface. This supercell formation was caused by a local ordering of Ni and Si atoms that favor lower free energy during rapid solidification. Ti rapidly segregates from the alloy melt and forms a protective TiOx overlayer on the surface during solidification. Melt front progressing towards the Ni-rich region leads to quenching of an amorphous layer sandwiched between NiSi2 grains and the TiOx overlayer.||URI:||https://hdl.handle.net/10356/95000
|DOI:||10.1063/1.2186073||Rights:||© 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2186073. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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