Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95000
Title: Laser induced Ni(Ti) silicide formation
Authors: Setiawan, Y.
Lee, Pooi See
Pey, Kin Leong
Wang, X. C.
Lim, G. C.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2006
Source: Setiawan, Y., Lee, P. S., Pey, K. L., Wang, X. C., & Lim, G. C. (2006). Laser induced Ni(Ti) silicide formation. Applied Physics Letters, 88(11).
Series/Report no.: Applied physics letters
Abstract: Effects of Ti alloying during laser-induced Ni silicide formation is studied. Unique triple layer microstructures were found with the presence of supercell in the NiSi2 grains formed at the interface. This supercell formation was caused by a local ordering of Ni and Si atoms that favor lower free energy during rapid solidification. Ti rapidly segregates from the alloy melt and forms a protective TiOx overlayer on the surface during solidification. Melt front progressing towards the Ni-rich region leads to quenching of an amorphous layer sandwiched between NiSi2 grains and the TiOx overlayer.
URI: https://hdl.handle.net/10356/95000
http://hdl.handle.net/10220/8093
DOI: http://dx.doi.org/10.1063/1.2186073
Rights: © 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2186073. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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