dc.contributor.authorChow, F. L.
dc.contributor.authorPey, Kin Leong
dc.contributor.authorLee, Pooi See
dc.contributor.authorTung, Chih Hang
dc.contributor.authorWang, X. C.
dc.contributor.authorLim, G. C.
dc.contributor.authorChong, Y. F.
dc.date.accessioned2012-05-18T07:00:45Z
dc.date.available2012-05-18T07:00:45Z
dc.date.copyright2004en_US
dc.date.issued2004
dc.identifier.citationChow, F. L., Pey, K. L., Lee, P. S., Tung, C. H., Wang, X. C., Lim, G. C., et al. (2004). Silicide formation from laser thermal processing of Ti/Co bilayers. Electrochemical and Solid-State Letters, 7(10), G213-G215.en_US
dc.identifier.urihttp://hdl.handle.net/10220/8094
dc.description.abstractA bilayered CoTi silicide structure consisting of an amorphous CoTi silicide and a highly textured CoTi silicide was found after pulsed excimer laser annealing of titanium/cobalt/silicon stack at high fluence of 0.6 J/cm2. The highly textured CoTi silicide is monocrystalline and fully coherent with the Si(111) plane of the substrate but has a large amount of microstructural defects. The constitutional supercooling phenomenon is the solidification mechanism responsible for the highly textured CoTi silicide. The incomplete crystallization shown by the presence of the amorphous CoTi silicide is attributed to a high concentration of titanium impurity.en_US
dc.format.extent3 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesElectrochemical and solid-state lettersen_US
dc.rights© 2004 The Electrochemical Society. This paper was published in Electrochemical and Solid-State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.1788612. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials
dc.titleSilicide formation from laser thermal processing of Ti/Co bilayersen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1149/1.1788612
dc.description.versionPublished versionen_US


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