dc.contributor.authorSetiawan, Y.
dc.contributor.authorLee, Pooi See
dc.contributor.authorPey, Kin Leong
dc.contributor.authorWang, X. C.
dc.contributor.authorLim, G. C.
dc.contributor.authorTan, B. L.
dc.date.accessioned2012-05-18T07:45:23Z
dc.date.available2012-05-18T07:45:23Z
dc.date.copyright2007en_US
dc.date.issued2007
dc.identifier.citationSetiawan, Y., Lee, P. S., Pey, K. L., Wang, X. C., Lim, G. C., & Tan, B. L. (2007). Laser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructure. Applied Physics Letters, 90(7).en_US
dc.identifier.urihttp://hdl.handle.net/10220/8101
dc.description.abstractLaser-induced Ni(Pt) germanosilicide formation on Si1−xGex /Si substrate has resulted in the formation of smooth Ni(Pt) germanosilicide/Si interface with minimum interface roughness which is preferred as a contact material. A confined (self-limiting) melting phenomenon occurred during the laser-induced silicidation process at laser fluence of 0.4 J cm−2 (just at the melting threshold of the sample). This phenomenon is caused by significant differences in material properties of Si1−xGex alloy and Si substrates. Formation of highly textured [Ni1−v(Pt)v](Si1−yGey) phase was detected in the sample after 20-pulsed laser thermal annealing at 0.4 J cm−2. The formation mechanism of the Ni(Pt) monogermanosilicide is discussed.en_US
dc.format.extent3 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2560935. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials
dc.titleLaser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructureen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.2560935
dc.description.versionPublished versionen_US


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