Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes
Chi, Dong Zhi
Lahiri, S. K.
Lee, Pooi See
Pey, Kin Leong
Date of Issue2001
School of Materials Science and Engineering
A comparative study of the I –V characteristics of p+/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I –V characteristics were observed for some of the diodes which were silicided with pure Ni at 700 °C while good I –V characteristics were observed for other diodes. Our results show that the forward current in the diodes with good I –V characteristics is dominated by electron diffusion in the p+ region. For diodes with higher saturation currents, it has been concluded that both forward and reverse currents in these diodes are dominated by the current following through Schottky contacts that are formed due to inadvertent penetration of NiSi spikes through the p1 region into n region. The formation of Schottky contact was not observed in diodes silicided with a Ni(Pt) alloy, providing a clear evidence of enhanced thermal stability of Pt containing NiSi.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Applied physics letters
© 2001 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.1374496. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.