dc.contributor.authorJu, Zhengang
dc.contributor.authorTan, Swee Tiam
dc.contributor.authorZhang, Zi-Hui
dc.contributor.authorJi, Y.
dc.contributor.authorKyaw, Z.
dc.contributor.authorDikme, Y.
dc.contributor.authorSun, Xiaowei
dc.contributor.authorDemir, Hilmi Volkan
dc.date.accessioned2012-05-23T02:33:58Z
dc.date.available2012-05-23T02:33:58Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationJu, Z., Tan, S. T., Zhang, Z.-H., Ji, Y., Kyaw, Z., Dikme, Y., et al. (2012). On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer. Applied physics letters, 100.en_US
dc.identifier.urihttp://hdl.handle.net/10220/8126
dc.description.abstractA redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells.en_US
dc.format.extent5 p.
dc.language.isoenen_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3694054].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleOn the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayeren_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.3694054
dc.description.versionPublished versionen_US
dc.identifier.rims165110


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