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|Title:||Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface||Authors:||Made, Riko I.
Gan, Chee Lip
Tan, Chuan Seng
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2010||Source:||Made, R. I., Gan, C. L. & Tan, C. S. (2010). Modeling of Electromigration Induced Contact Resistance Reduction of Cu-Cu Bonded Interface. ECS Transactions, 33(12), 23-34.||Series/Report no.:||ECS transactions||Abstract:||Metal to metal bonding, particularly Cu-Cu bonding, is an important part of three dimensional integrated circuits (3DICs) that utilizes wafer bonding. The use of Cu to Cu bonding in 3DICs is advantageous as it functions as both the glue layer and electrical interconnection. It has been observed that the contact resistance of bonded Cu interface could be decreased under direct current stressing. In this paper the mentioned phenomena is modeled and simulated. Electromigration induced contact resistance reduction of bonded interconnects may provide a method for post-bonding bond property improvement for 3DICs||URI:||https://hdl.handle.net/10356/94656
|DOI:||10.1149/1.3501031||Rights:||©2010 The Electrochemical Society. This paper was published in ECS Transactions and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: [DOI: http://dx.doi.org/10.1149/1.3501031 ]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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