Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/94653
Title: Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits
Authors: Made, Riko I.
Lan, Peng
Li, Hong Yu
Gan, Chee Lip
Tan, Chuan Seng
Keywords: DRNTU::Engineering::Materials::Metallic materials
Issue Date: 2011
Source: Made, R. I., Lan, P., Li, H. Y., Gan, C. L., & Tan, C. S. (2011). Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits. In Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International, pp.1-3.
Abstract: While the ultimate goal of Cu interconnection in 3D-IC is to have Cu as both the glue layer and interconnection line, there has been numerous demonstration of Cu-Cu bonding that shows the bonding interface is not always perfect. This work investigates the evolution of Cu-Cu bond interface under prolonged current stress by combining electrical current stressing and bond interface cross-sectional analysis. Voids at the bond interface were observed to be driven by electromigration to the adjoining interconnect line, leading to early failures of the line. This may have significant impact on the future of 3D-IC technology that utilizes Cu-Cu bonding, and it may be mitigated by inserting a barrier layer in between the bond interface and the interconnect line.
URI: https://hdl.handle.net/10356/94653
http://hdl.handle.net/10220/8182
DOI: http://dx.doi.org/10.1109/IITC.2011.5940302
Rights: © 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/IITC.2011.5940302 ]
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Conference Papers

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