Formation and characterization of magnetron sputtered Ta–Si–N–O thin ﬁlms
Ho, F. Y.
Liang, M. H.
Pan, J. S.
Date of Issue2009
School of Materials Science and Engineering
Tantalum silicon nitride ﬁlms have good potential to be used as hard coatings and diffusion barriers. In this work, ﬁlms with different composition were deposited using a magnetron sputter under varying nitrogen ﬂow rates. The composition, microstructure, thermal stability and electrical resistivity have been investigated. In the as-deposited state, all ﬁlms consist of amorphous TaSixOy, TaxOy, TaxNy and TaSix compounds. The composition of ﬁlms is affected by N2 ﬂow rate. The resistivity of the as-deposited ﬁlms increases with N concentrations. At elevated temperatures, all ﬁlms show good thermal stability to at least 800 °C, while ﬁlm with high Si concentration is largely amorphous at 900 °C because of highly stable TaSixOy compounds. This study suggests that the TaSixOy compounds could be the key factor in enhancing thermal stability of Ta–Si–N–O ﬁlms.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Thin solid films
© 2009 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Thin Solid Films, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.tsf.2009.03.057].