Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95679
Title: Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode
Authors: Qi, K. C.
Ling, Bo
Sun, Xiaowei
Zhao, Jun Liang
Tan, Swee Tiam
Dong, Zhili
Yang, Yi
Yu, Hongyu
Keywords: DRNTU::Engineering::Materials
Issue Date: 2008
Source: Ling, B., Sun, X., Zhao, J. L., Tan, S. T., Dong, Z. L., Yang, Y., et al. (2009). Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode. Physica E, 41(4), 635-639.
Series/Report no.: Physica E
Abstract: n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p+-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current–voltage characteristics of the devices showed good rectifying behavior with a high forward-to-reverse current ratio of around 120 at ±7V. Strong ultraviolet electro-luminescence centered at ~390 nm and a broad green-band emission were observed from the diode at room-temperature. The p-CuAlO2 layer was found to facilitate hole injection from p+-Si into n-ZnO while confining the electrons at ZnO/CuAlO2 interface, thus effectively enhancing the recombination emission efficiency in ZnO NRs.
URI: https://hdl.handle.net/10356/95679
http://hdl.handle.net/10220/8275
DOI: http://dx.doi.org/10.1016/j.physe.2008.10.017
Rights: © 2008 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Physica E, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: http://dx.doi.org/10.1016/j.physe.2008.10.017.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles

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