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|Title:||Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition||Authors:||Zhang, X. H.
Chen, B. J.
Chua, S. J.
Tan, Swee Tiam
|Keywords:||DRNTU::Engineering::Materials||Issue Date:||2006||Source:||Tan, S. T., Sun, X., Zhang, X. H., Chen, B. J., Chua, S. J., Yong, A., et al. (2006). Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition. Journal of Crystal Growth, 290(2), 518-522.||Series/Report no.:||Journal of crystal growth||Abstract:||Zinc oxide (ZnO) quantum dots (QDs) were fabricated on silicon substrates by metal organic chemical vapor deposition. Formation of QDs is due to the vigorous reaction of the precursors when a large amount of precursors was introduced during the growth. The size of the QDs ranged from 3 to 12 nm, which was estimated by high-resolution transmission electron microscopy. The photoluminescence measured at 80K showed that the emission of QDs embedded film ranged from 3.0 to 3.6eV. The broad near-band-edge emission was due to the quantum confinement effect of the QDs.||URI:||https://hdl.handle.net/10356/95559
|DOI:||10.1016/j.jcrysgro.2006.02.035||Rights:||© 2006 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Crystal Growth, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: http://dx.doi.org/10.1016/j.jcrysgro.2006.02.035.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
MSE Journal Articles
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