dc.contributor.authorZhou, Wenwen
dc.contributor.authorYin, Zongyou
dc.contributor.authorSim, Daohao
dc.contributor.authorZhang, Hua
dc.contributor.authorMa, Jan
dc.contributor.authorHng, Huey Hoon
dc.contributor.authorYan, Qingyu
dc.date.accessioned2012-07-13T04:31:24Z
dc.date.available2012-07-13T04:31:24Z
dc.date.copyright2011en_US
dc.date.issued2011
dc.identifier.citationZhou, W., Yin, Z., Sim, D., Zhang, H., Ma, J., Hng, H. H., & Yan, Q. (2011). Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process. Nanotechnology, 22, 195607.en_US
dc.identifier.urihttp://hdl.handle.net/10220/8331
dc.description.abstractCuInSe2 (CIS) nanodandelion structures were synthesized by a two-step solvothermal approach. First, InSe nanodandelions were prepared by reacting In(acac)3 with trioctylphosphine-selenide (TOP-Se) in 1-octadecene (ODE) at 170 °C in the presence of oleic acid. These InSe dandelions were composed of polycrystalline nanosheets with thickness < 10 nm. The size of the InSe dandelions could be tuned within the range of 300 nm–2 µm by adjusting the amount of oleic acid added during the synthesis. The InSe dandelion structures were then reacted with Cu(acac)2 in the second-step solvothermal process in ODE to form CIS nanodandelions. The band gap of the CIS dandelions was determined from ultraviolet (UV) absorption measurements to be ~ 1.36 eV, and this value did not show any obvious change upon varying the size of the CIS dandelions. Brunauer–Emmett–Teller (BET) measurements showed that the specific surface area of these CIS dandelion structures was 44.80 m2 g − 1, which was more than five times higher than that of the CIS quantum dots (e.g. 8.22 m2 g − 1) prepared by using reported protocols. A fast photoresponsive behavior was demonstrated in a photoswitching device using the 200 nm CIS dandelions as the active materials, which suggested their possible application in optoelectronic devices.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesNanotechnologyen_US
dc.rights© 2011 IOP Publishing Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Nanotechnology, IOP Publishing Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1088/0957-4484/22/19/195607].en_US
dc.subjectDRNTU::Engineering::Materials::Nanostructured materials
dc.titleGrowth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal processen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0957-4484/22/19/195607
dc.description.versionAccepted versionen_US


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