Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
Tan, Eu Jin
Pey, Kin Leong
Chi, Dong Zhi
Lee, Pooi See
Tang, L. J.
Date of Issue2006
School of Materials Science and Engineering
Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are likely sources of trap states. A method to improve the ϕ_Beff and of the diodes utilizing in situ Ar plasma cleaning to induce a light amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous Schottky contact model.
IEEE electron device letters
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