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|Title:||Multiple-pulse laser thermal annealing for the formation of Co-silicided junction||Authors:||Lee, Pooi See
Pey, Kin Leong
Chow, F. L.
Tang, L. J.
Tung, Chih Hang
Wang, X. C.
Lim, G. C.
|Keywords:||DRNTU::Engineering::Materials||Issue Date:||2006||Source:||Lee, P. S., Pey, K. L., Chow, F. L., Tang, L. J., Tung, C. H., Wang, X. C., et al. (2006). Multiple-pulse Laser Thermal Annealing for the Formation of Co-silicided Junction. IEEE Electron Device Letters, 27(4), 237-239.||Series/Report no.:||IEEE electron device letters||Abstract:||Formation of Co-silicide contact layers on narrow silicon regions using multiple-pulse excimer laser annealing is demonstrated. Excellent performance of junction leakage behavior can be attained on narrow-width n+/p and p+/n junction as compared with standard rapid thermal annealed samples. Liquid-phase epitaxial Co-silicide regrowth has been found to occur and create a smooth and abrupt silicide/Si interface with high junction integrity using multiple-pulse laser annealing. Heat confinement created by the shallow trench isolation surrounding the narrow-width n+/p and p+/n junctions has minimized rapid quenching that might result in an amorphous structure. This has facilitated the crystallization of Co-silicide with multiple-pulse laser annealing.||URI:||https://hdl.handle.net/10356/95649
|DOI:||http://dx.doi.org/10.1109/LED.2006.871536||Rights:||© 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/LED.2006.871536.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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