dc.contributor.authorTan, Eu Jin
dc.contributor.authorPey, Kin Leong
dc.contributor.authorSingh, Navab
dc.contributor.authorLo, Guo-Qiang
dc.contributor.authorChi, Dong Zhi
dc.contributor.authorChin, Yoke King
dc.contributor.authorTang, L. J.
dc.contributor.authorLee, Pooi See
dc.contributor.authorHo, C. K. F.
dc.date.accessioned2012-07-26T04:12:25Z
dc.date.available2012-07-26T04:12:25Z
dc.date.copyright2008en_US
dc.date.issued2008
dc.identifier.citationTan, E. J., Pey, K. L., Singh, N., Lo, G. Q., Chi, D. Z., Chin, Y. K., et al. (2008). Nickel-silicided Schottky Junction CMOS Transistors with Gate-all-around Nanowire Channels. IEEE Electron Device Letters, 29(8), 902-905.en_US
dc.identifier.urihttp://hdl.handle.net/10220/8344
dc.description.abstractWe demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. The transistors exhibit good Ion/Ioff characteristics, along with fully controlled shortchannel effects revealed by low drain-induced barrier lowering (~10 mV/V) and near-ideal subthreshold swing (~60 mV/dec). Although the N-MOSFET required dopant segregation to suppress the ambipolar behavior, excellent P-MOSFET characteristics could be achieved without the use of barrier modification techniques. We attribute this to the Schottky barrier thinning in a nanosized metal–semiconductor junction and superior gate electrostatic control in a GAA nanowire architecture.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE electron device lettersen_US
dc.rights© 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/LED.2008.2000876.en_US
dc.subjectDRNTU::Engineering::Materials
dc.titleNickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channelsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/LED.2008.2000876
dc.description.versionAccepted versionen_US


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