dc.contributor.authorYan, Chaoyi
dc.contributor.authorLee, Pooi See
dc.date.accessioned2012-09-13T01:47:27Z
dc.date.available2012-09-13T01:47:27Z
dc.date.copyright2009en_US
dc.date.issued2009
dc.identifier.citationYan, C., & Lee, P. S. (2009). Bismuth-catalyzed growth of germanium nanowires in vapor phase. The Journal of Physical Chemistry C, 113(6), 2208-2211.en_US
dc.identifier.urihttp://hdl.handle.net/10220/8510
dc.description.abstractWe report the successful synthesis of single crystalline Ge nanowires using Bi as catalyst. To the best of our knowledge, this is the first time Bi was used in vapor phase for Ge nanowire growth. An in situ catalyst evaporation method was used to obtain the high quality Ge nanowires. Diameters of the nanowires are in the range of 10−40 nm and the growth direction is along <111>. Composition analyses showed that the nanowires were composed of Ge while the capping catalyst particles were Bi. Controlled experiments showed that source material with proper Bi/Ge molar ratio was a key aspect for the growth of high purity nanowires. The low-temperature growth of Ge nanowires, enabled by the low eutectic point of Bi/Ge, is especially desired for their potential integration with existing semiconductor technologies.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesThe journal of physical chemistry Cen_US
dc.rights© 2009 American Chemical Societyen_US
dc.subjectDRNTU::Engineering::Materials
dc.titleBismuth-catalyzed growth of germanium nanowires in vapor phaseen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1021/jp8111414


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