dc.contributor.authorLi, Liang
dc.contributor.authorLee, Pooi See
dc.contributor.authorYan, Chaoyi
dc.contributor.authorZhai, Tianyou
dc.contributor.authorFang, Xiaosheng
dc.contributor.authorLiao, Meiyong
dc.contributor.authorKoide, Yasuo
dc.contributor.authorBando, Yoshio
dc.contributor.authorGolberg, Dmitri
dc.date.accessioned2012-09-14T01:42:14Z
dc.date.available2012-09-14T01:42:14Z
dc.date.copyright2010en_US
dc.date.issued2010
dc.identifier.citationLi, L., Lee, P. S., Yan, C., Zhai, T., Fang, X., Liao, M., et al. (2010). Ultrahigh-performance solar-blind photodetectors based on individual single-crystalline In2Ge2O7 nanobelts. Advanced Materials, 22(45), 5145-5149.en_US
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://hdl.handle.net/10220/8525
dc.description.abstractSolar-blind photodetectors are designed from individual In2Ge2O7 nanobelts using a standard photolithography technique. The detectors demonstrated high sensitivity and selectivity towards the solar-blind spectrum, fast response and decay times ∼ 3 ms, high responsivity ∼ 3.9 × 10^5 A W^−1, and high quantum efficiency ∼2.0 × 10^8%.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesAdvanced materialsen_US
dc.rights© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.subjectDRNTU::Engineering::Materials
dc.titleUltrahigh-performance solar-blind photodetectors based on individual single-crystalline In2Ge2O7 nanobeltsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1002/adma.201002608


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