dc.contributor.authorLiu, Juqing
dc.contributor.authorYin, Zongyou
dc.contributor.authorCao, Xiehong
dc.contributor.authorZhao, Fei
dc.contributor.authorLin, Anping
dc.contributor.authorXie, Linghai
dc.contributor.authorFan, Qu-Li
dc.contributor.authorBoey, Freddy Yin Chiang
dc.contributor.authorZhang, Hua
dc.contributor.authorHuang, Wei
dc.identifier.citationLiu, J., Yin, Z., Cao, X., Zhao, F., Lin, A., Xie, L., et al. (2010). Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes. ACS Nano, 4(7), 3987-3992.en_US
dc.description.abstractA unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current−voltage (I−V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104−105) and low switching threshold voltage (0.5−1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.en_US
dc.relation.ispartofseriesACS nanoen_US
dc.rights© 2010 American Chemical Society.en_US
dc.titleBulk heterojunction polymer memory devices with reduced graphene oxide as electrodesen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US

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