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      High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures

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      Author
      Zhang, Hua
      Amro, Nabil A.
      Disawal, Sandeep
      Elghanian, Robert
      Shile, Roger
      Fragala, Joseph
      Date of Issue
      2007
      School
      School of Materials Science and Engineering
      Abstract
      Si nanostructures: A new method for fabricating large-area Si nanostructures in a high-throughput fashion has been demonstrated. The procedure is based upon dip-pen nanolithography in combination with wet-chemical etching and reactive ion etching. Multipen techniques have been demonstrated for the fabrication of large-area Si nanostructure arrays (see AFM image; dot 1: diameter/height=1460/140 nm; dot 9: diameter/height=385/75 nm).
      Subject
      DRNTU::Engineering::Materials
      Type
      Journal Article
      Series/Journal Title
      Small
      Rights
      © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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      • MSE Journal Articles
      http://dx.doi.org/10.1002/smll.200600393
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