Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95378
Title: High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures
Authors: Fragala, Joseph
Zhang, Hua
Disawal, Sandeep
Elghanian, Robert
Shile, Roger
Amro, Nabil A.
Keywords: DRNTU::Engineering::Materials
Issue Date: 2007
Source: Zhang, H., Amro, N. A., Disawal, S., Elghanian, R., Shile, R., & Fragala, J. (2007). High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures. Small, 3(1), 81-85.
Series/Report no.: Small
Abstract: Si nanostructures: A new method for fabricating large-area Si nanostructures in a high-throughput fashion has been demonstrated. The procedure is based upon dip-pen nanolithography in combination with wet-chemical etching and reactive ion etching. Multipen techniques have been demonstrated for the fabrication of large-area Si nanostructure arrays (see AFM image; dot 1: diameter/height=1460/140 nm; dot 9: diameter/height=385/75 nm).
URI: https://hdl.handle.net/10356/95378
http://hdl.handle.net/10220/8613
ISSN: 1613-6829
DOI: http://dx.doi.org/10.1002/smll.200600393
Rights: © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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