High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures
Author
Zhang, Hua
Amro, Nabil A.
Disawal, Sandeep
Elghanian, Robert
Shile, Roger
Fragala, Joseph
Date of Issue
2007School
School of Materials Science and Engineering
Abstract
Si nanostructures: A new method for fabricating large-area Si nanostructures in a high-throughput fashion has been demonstrated. The procedure is based upon dip-pen nanolithography in combination with wet-chemical etching and reactive ion etching. Multipen techniques have been demonstrated for the fabrication of large-area Si nanostructure arrays (see AFM image; dot 1: diameter/height=1460/140 nm; dot 9: diameter/height=385/75 nm).
Subject
DRNTU::Engineering::Materials
Type
Journal Article
Series/Journal Title
Small
Rights
© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Collections
http://dx.doi.org/10.1002/smll.200600393
Get published version (via Digital Object Identifier)