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https://hdl.handle.net/10356/94300
Title: | Stress studies on Ti and TiN interlayer in (100) silicon wafers | Authors: | Tay, Stephen En Rong | Issue Date: | 2010 | Source: | Tay, S. E. R. (2010, March). Stress studies on Ti and TiN interlayer in (100) silicon wafers. Presented at Discover URECA @ NTU poster exhibition and competition, Nanyang Technological University, Singapore. | Abstract: | Ti is used to improve wettability between Al and Si. TiN is used as a diffusion barrier to prevent diffusion of Al into Si during annealing. In this study, stress from Ti and TiN thin-films on (100) Silicon wafers are studied using Stoney’s equation. [1st Award] | URI: | https://hdl.handle.net/10356/94300 http://hdl.handle.net/10220/8945 |
Schools: | School of Electrical and Electronic Engineering | Rights: | © 2010 The Author(s). | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | URECA Posters |
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File | Description | Size | Format | |
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EEE09151[1].pdf | 1.31 MB | Adobe PDF | View/Open |
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