Stress studies on Ti and TiN interlayer in (100) silicon wafers
Tay, Stephen En Rong
Date of Issue2010
School of Electrical and Electronic Engineering
Ti is used to improve wettability between Al and Si. TiN is used as a diffusion barrier to prevent diffusion of Al into Si during annealing. In this study, stress from Ti and TiN thin-films on (100) Silicon wafers are studied using Stoney’s equation. [1st Award]
Student Research Poster
© 2010 The Author(s).