dc.contributor.authorSun, Sheng
dc.contributor.authorAng, Ricky Lay Kee
dc.date.accessioned2013-01-31T08:58:42Z
dc.date.available2013-01-31T08:58:42Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationSun, S., & Ang, L. K. R. (2012). Shot noise of low energy electron field emission due to Klein tunneling. Journal of applied physics, 112(1), 016104-.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10220/9057
dc.description.abstractThis paper investigates the property of shot noise for low energy electron field emission from a single-layer vertically aligned graphene sheet assuming the emission process is due to Klein tunneling. In our model, we use two different methods (relativistic WKB and transfer matrix) to calculate the transmission coefficient and thus obtain the Fano factor (γ or suppression of shot noise) as a function of temperature T, Fermi energy Ef, and local electric field F. It is found that a universal maximum value of about γ = 1/3 can be reached at low temperature limit within a certain range of local electric field.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4733349]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleShot noise of low energy electron field emission due to Klein tunnelingen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4733349
dc.description.versionPublished versionen_US


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