dc.contributor.authorThakare, Vishal
dc.contributor.authorXing, Guozhong
dc.contributor.authorPeng, Haiyang
dc.contributor.authorRana, Abhimanyu
dc.contributor.authorGame, Onkar
dc.contributor.authorAnil Kumar, P.
dc.contributor.authorBanpurkar, Arun
dc.contributor.authorKolekar, Yesappa
dc.contributor.authorGhosh, Kartik
dc.contributor.authorWu, Tom
dc.contributor.authorSarma, D. D.
dc.contributor.authorOgale, Satishchandra B.
dc.date.accessioned2013-02-18T07:04:16Z
dc.date.available2013-02-18T07:04:16Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationThakare, V., Xing, G., Peng, H., Rana, A., Game, O., Anil Kumar, P., et al. (2012). High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure. Applied Physics Letters, 100(17), 172412-.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10220/9136
dc.description.abstractThe phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the “magnetic” aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe2O4/La0.66Sr0.34MnO3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0–100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4707373]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Science::Physics::Electricity and magnetism
dc.titleHigh sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructureen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4707373
dc.description.versionPublished versionen_US


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