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Title: Domain-related origin of magnetic relaxation in compressively strained manganite thin films
Authors: Miao, B. F.
Lin, W.
Hu, W.
David, A.
Ding, H. F.
Wu, T.
Bakaul, Saidur Rahman
Keywords: DRNTU::Engineering::Materials::Magnetic materials
Issue Date: 2012
Source: Bakaul, S. R., Miao, B. F., Lin, W., Hu, W., David, A., Ding, H. F., et al. (2012). Domain-related origin of magnetic relaxation in compressively strained manganite thin films. Applied Physics Letters, 101(1), 012408-.
Series/Report no.: Applied physics letters
Abstract: Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La0.7Sr0.3MnO3 thin films. Upon the removal of external magnetic field, the slow time-dependent increase of in-plane magnetization is correlated with the break-up of magnetic domains and the emergence of additional domain walls, whereas a reduction of magnetization for the initial short period dominates the magnetic relaxation at lower temperatures in thinner films. These relaxation effects underline the importance of domain dynamics in the properties of magnetic thin films.
ISSN: 0003-6951
DOI: 10.1063/1.4733320
Rights: © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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